Schottky problem

Schottky problem - Encyclopedia of Mathematic

Since the Schottky problem asks for a characterization, different approaches might lead to different answers. One approach uses the fact that the theta divisor of a Jacobian is singular (for $ g \geq 4 $): the dimension of its singular locus is $ \geq g- 4 $. It is therefore natural to consider the locus $ N _ {g} ^ {m} \subset {\mathcal A} _ {g} $ of principally-polarized Abelian varieties $ ( A, \Theta ) $ of dimension $ g $ with $ \mathop{\rm dim} ( \mathop{\rm Sing} ( \Theta. The Schottky problem is the problem of nding characterizations of Jacobians among all principally polarized abelian varieties (for g 4). For the sake of simplicity, we will say that a property is a weak characterization of Jacobians if J g is an irreducible component of the set of principally polarized abelian varieties with this property. 1. The analytical approac die Frage, wie sich PeriodenMatrizen von kompakten Riemannschen Flächen unter allen Matrizen, die die Riemannschen Periodenrelationen (Hodge-Struktur The Riemann-Schottky problem is the problem of determining which complex principally polarized abelian varieties arise as Jacobian varieties of complex curves. The history of the problem is very long, going back to the works of Abel, Jacobi, and Riemann. The first approach, culminating in a complete solution i Donagi R. (1988) The schottky problem. In: Sernesi E. (eds) Theory of Moduli. Lecture Notes in Mathematics, vol 1337. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0082807. First Online 28 September 2006; DOI https://doi.org/10.1007/BFb0082807; Publisher Name Springer, Berlin, Heidelberg; Print ISBN 978-3-540-50080-3; Online ISBN 978-3-540-45920

In this survey we discuss some of the classical and modern methods in studying the (Riemann-)Schottky problem, the problem of characterizing Jacobians of curves among principally polarized abelian varieties. We present many of the recent results in this subject, and describe some directions of current research. This paper is based on the talk given at the Classical algebraic geometry today. A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal-semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by ΦB. The value of ΦB depends on the combination of metal and semiconductor. Not all metal-semiconductor junctions form a rectifying Schottky barrier; a metal. Nach ihm ist das Schottky-Problem der Charakterisierung der Jacobi-Varietäten unter den abelschen Varietäten benannt. Es wurde von Takahiro Shiota 1986 gelöst, ist aber nach wie vor Gegenstand der Forschung. Werke. Werke von Friedrich Schottky im Electronic Research Archive for Mathematics ; Abriß einer Theorie der abelschen Functionen von drei Variablen, Teubner 1880 (Projekt Gutenberg.

Schottky-Kontakt, ein Metall-Halbleiter-Kontakt mit gleichrichtendem Verhalten. Ähnlich dem p-n-Übergang bildet sich an der Grenzfläche eine Verarmungsschicht aus The Schottky problem is the problem of characterizing the Jaco­ bians of algebraic curves among' all principally polarized abelian varieties. The three most successful approaches to this problem are associated with the names of Schottky-Jung, Andreotti-Mayer, and.. Novikov. The special properties used to characterize Jacobians are, respectively, the existence of Prym varieties, the large. The Schottky problem has a long history, tied inextricably to curve theory as a whole. It is one of the rst questions to ask at the beginning of the theory: how can one characterize which abelian varieties are the Jacobians of curves? The rst results were obtained by Schottky himself, and with his collaborator Jung [Sch88, JS09]. The next result in this spirit wasn't until the 1980s, when.

Schottky Problem The Schottky problem, in a general sense, is a problem of finding a good characterization of jacobian varieties. Since jacobians form an interesting special class of abelian varieties, historically a characterization always meant a characterization among abelian varieties. There has been a substantial amount of work done by many great mathematicians after Schottky's original work [Scho] of 1888. A natural approach to this problem is to perform a case study for low. Schottky problem In mathematics , the Schottky problem, named after Friedrich Schottky , is a classical question of algebraic geometry , asking for a characterisation of Jacobian varieties amongst abelian varieties section of the Schottky locus with blow-up of a boundary component of (4,8). g It is a recurring phenomenon in the history of the Schottky problem that one finds algebraic subsets of A that contain J as as irred- g g ucible component but that may have other components as well. Anothe

The Schottky problem is the problem of finding characterizations of Jacobians among all principally polarized abelian varieties. We review the numerous approaches to this problem. In the analytical approach, one tries to find polynomials in the thetaconstants that define the Jacobian locus in the moduli space of principally polarized abelian varieties. We review van Geemen's (1984) and. Schottky problem. From HandWiki. Jump to: navigation, search. In mathematics, the Schottky problem, named after Friedrich Schottky, is a classical question of algebraic geometry, asking for a characterisation of Jacobian varieties amongst abelian varieties. Contents. 1.

Illustration of thermal runaway for a Schottky rectifier. While many factors are at play, generating unnecessary heat and not removing heat fast enough are two key issues. This is why thermal runaway tends to happen more often in applications with ambient temperatures of 100 °C and higher. In these situations dissipating excess heat can be difficult. Typical examples include under-the-hood automotive applications and LED lighting, where the heat from the LEDs is dissipated close. Schottky problem. ♦ 1—10 of 99 matching pages ♦ . Search Advanced Help (0.000 seconds) 1—10 of 99 matching pages 1: 21.10 Methods of Computation In addition to evaluating the Fourier series, the main problem here is to compute a Riemann matrix originating from a Riemann surface. • Belokolos et al. (1994, Chapter 5) and references therein. Here the Riemann surface is. In mathematics, the Schottky problem, named after Friedrich Schottky, is a classical question of algebraic geometry, asking for a characterisation of Jacobian varieties amongst abelian varieties. Alles immer versandkostenfrei!

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Federico Gaeta (1923-2007) was a Spanish algebraic geometer who was a student of Severi. He is considered to be one of the founders of linkage theory, on which he published several key papers Schottky rectifiers have been used for over 25 years in the power supply industry. The primary advantages are very low forward voltage drop and switching speeds that approach zero time making them ideal for output stages of switching power supplies. This latter feature has also stimulated their additional use in very high frequency applications including very low power involving signal and. The Trench Schottky diode can be seen as a further development of the Schottky diode, expanding the limits of its planar counterpart. In this article, the functioning and the benefits of Trench Schottky rectifiers are discussed. An ideal rectifier will generally have a low forward voltage drop, a high reverse blocking voltage, zero leakage.

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Schottky barrier - Wikipedi

  1. Schottky diodes are used in many applications where other types of diode will not perform as well. They offer a number of advantages: Low turn on voltage: The turn on voltage for the diode is between 0.2 and 0.3 volts for a silicon diode against 0.6 to 0.7 volts for a standard silicon diode. This makes it have very much the same turn on voltage as a germanium diode. Fast recovery time: The.
  2. Schottky diode under bias. Forward bias corresponds to a positive voltage applied to the metal with respect to the semi­conductor. Just as for a p + -n junction, the depletion width under small forward bias and reverse bias may be obtained by substituting V bi with V bi V, where V is the applied voltage
  3. ed by LC resonance caused by its total capacitance and wire inductance. Because the total capacitance of a Schottky barrier diode is not affected by temperature, its reverse recovery time does not change with temperature
  4. The Schottky barrier diodes are used for signal-routing tasks, rail-to-rail protection and RF applications, such as balanced mixers and demodulators. Devices above 100 mA enter the converter application field with rectification tasks, or discrete OR-ing function. ST's portfolio of small-signal Schottky barrier diodes offer forward voltages from 200 mV to 1 V with repetitive peak reverse.
  5. Schottky diodes are also used as rectifiers in power supplies. Advantages Of Schottky Diode. Schottky diodes are used in many applications compared to other types of diodes that do not perform well. Low turn-on voltage: The turn-on voltage for the diode is between 0.2 and 0.3 volts. For a silicon diode, it is against 0.6 to 0.7 volts from a.
  6. The mercury cell problem and its solutions. Index. Page 1: Index and general information on mercury battery problems and solutions. Temperature influence on Schottky-diodes and PX27 battery problem and solutions. 6: Materials and tools needed for making a battery adapter and disclaimer. 7: Elaborate step-by-step guide for making a homemade PX13 / PX625 / MR9 battery adapter. 8: Last piece.
  7. Dieser Buchtitel ist Teil des Digitalisierungsprojekts Springer Book Archives mit Publikationen, die seit den Anfängen des Verlags von 1842 erschienen sind. Der Verlag stellt mit diesem Archiv Quellen für die historische wie auch die disziplingeschichtliche Forschung zur Verfügung, die jeweils i

In this article, we discuss and survey the recent progress towards the Schottky problem, and make some comments on the relations between the Andr{é}-Oort conjecture, Okounkov convex bodies, Coleman's conjecture, stable modular forms, Siegel-Jacobi spaces, stable Jacobi forms and the Schottky problem An energy band diagram of an n-type silicon Schottky barrier including the barrier lowering is shown in the figure below: Fig. 3.2.x Energy band diagram of a silicon Schottky barrier with f B = 0.8 V and N D = 10 19 cm-3. The calculation of the barrier reduction assumes that the charge of an electron close to the metal-semiconductor interface attracts an opposite surface charge which exactly. problem. In addition, a new SBD structure solves the leakage and surge current problems. The following sections describe these benefits of SiC SBDs. Figure 2-1 compares the turn-off waveforms of a silicon FRD and a SiC SBD with the same withstand voltage on the same circuit. In principle, SiC SBDs have no reverse recovery charge (Q r A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the.

this problem is to use a Schottky diode array, as shown in Figure 3. Schottky diodes typically have a turn-on voltage of approximately 0.3 V. Figure 3. The Low Turn-on Voltage of a Schottky Diode can be Used to Provide Surge Protection for Low Voltage ICs VDD GND I/O ESD Circuit IC Input VDD VDD The circuit shown in Figure 4 is another alternative to solve the potential problem that can occur. Although Schottky generators based on friction-induced excitation can generate higher current densities (10 4 −10 7 Am −2), they have high wear rates and consequently a very short life (a few. CiteSeerX - Document Details (Isaac Councill, Lee Giles, Pradeep Teregowda): I would like to start by thanking two people without whom this thesis would not have been possible. First, my advisor, Ron Donagi, for all of his advice and the time he spent teaching me mathematics, not least of which included suggesting that I would enjoy working on the Schottky problem in the first place The latter problem is almost as old and famous as the Riemann-Schottky problem but is much harder. In some sense the Prym varieties may be geometrically the easiest-to-understand ppavs beyond Jacobians, and studying them may be a first step towards understanding the geometry of more general abelian varieties as well. Our second and primary objective is to take this opportunity to elaborate on.

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Thermal runaway in Schottky rectifier diodes is a problem in locations with high environmental heat, but it can be managed. Solving thermal runaway includes careful component choices and component package selection. Selecting components like the Nexperia line of planar Schottky diodes and trench Schottky diodes with wide operating temperatures — both of which have small form factor, low. Um dieses Problem zu lösen und die Energieeffizienz der gesamten Photovoltaikanlage zu optimieren, ist es ratsam, zwei Module in Reihe zu schalten (um eine Verdoppelung der Spannung zu erzielen) und anschließend die drei zuvor in Reihe geschalteten Paare parallel zu schalten. Auf diese Weise haben wir die Spannung verdoppelt und den Strom verdreifacht. In der Abbildung oben sehen Sie den. If there is a problem with the 5.0 volt and 3.3 volt sections, there may be a requirement to keep both of these (3.3 V and 5.0 V) above the 1.2 volt level to prevent damage and in addition preventing a SCR latch up condition. A Schottky diode will be required for each supply where the forward voltage drop would be less than 0.30 to 0.35 volts. Th

This problem can be effectively suppressed by applying the 1diode-1resistor (1D1R) design structure. The Schottky diode has many advantages compared to the PN junction diode. The low-power (∼1 µW) ZnO active-layered thin-film (60 nm thick) one Schottky diode-one memristor device fabricated in this study included a top Ag electrode and a bottom Al electrode. The material makeup of the device. When Schottky and Mott formulated the barrier-height theory for a metal-semiconductor junction and later when Anderson formulated the band-edge offset problem for semiconductor-semiconductor junctions, there was no consideration given to interface states as contributions to the electrostatic boundary conditions.The charge distribution at the interface was treated simply as a superposition of. voltage schottky diodes increase drastically with temperature. For example, 60 V rated schottky diode STPS20M60S has a 100 mA reverse leakage current at 150 °C, which amounts to 6 W of power dissipation at-60 V. Consider a case when only one power supply is fully supplying the load current due to forward voltage difference of schottky diodes or offset in power supply DC set point. If this.

Schottky-Kontakt - Lexikon der Physi

The two curves for each type diode are for two different bias levels. In each case, the Schottky-diode noise voltage at 1 kc is better than the point-contact by a factor of 3, with the two diodes reaching a comparable condition at 1000 kc. Microphonics is another problem area, often encountered in systems operating at low i-f frequencies. This. By replacing the small diode on the USB input I could successfully fix this problem. (red) Use a Schottky Diode with a low voltage drop! Extra capacitance is good, too (yellow). I re-soldered all ESPP32 Pins, just in case (blue). Copy link kapollo commented Jul 10, 2018. Just for brevity I had the same problem just a moment ago with MH-ET DevKit, in my case it seemed that the USB hub (passive. Theta divisors with curve summands and the Schottky problem MPS-Authors Schreieder, Stefan Max Planck Institute for Mathematics, Max Planck Society; External Resource No external resources are shared. Fulltext (public) Schreieder_Theta divisors_oa_2016.pdf (Any fulltext), 298KB. Eine Hinführung zu den thermodynamischen Problemen unserer Kraft- und Stoffwirtschaft. Berlin 1929. (Reprint Berlin 1973) (Hg.): Halbleiterprobleme. 6 Bände, Braunschweig 1954-1961. Quellen: Personalakte Walter Schottky, UAR Feldtkeller, Ernst; Goetzeler, Herbert (Hg.): Pioniere der Wissenschaft bei Siemens. Beruflicher Werdegang und wichtigste Ergebnisse. Erlangen 1994, S. 70-77. Serchinger.

KP Equations, Strings, and the Schottky Problem

Light-addressable electrochemical sensors (LAESs) are a class of sensors that use light to activate an electrochemical reaction on the surface of a semiconducting photoelectrode. Here, we investigate semiconductor/metal (Schottky) junctions formed between n-type Si and Au nanoparticles as light-addressable electrochemical sensors. To demonstrate this concept, we prepared n-Si/Au nanoparticle. Schottky barrier diode Rev. 4 — 14 November 2012 Product data sheet Ultra high-speed switching Voltage clamping Line termination Reverse polarity protection Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VR reverse voltage - - 40 V VF forward voltage IF =500mA [1]-- 550mV IR reverse current VR =35V [1]-- 100 A Pin Description Simplified outline Graphic. Trench-Schottky-Dioden mit Sperrspannungen bis 100V und Strömen bis 20A sind von Nexperia verfügbar. Die Dioden befinden sich in CFP-Gehäusen (Clip Bond FlatPower) des Herstellers, die weniger Platz benötigen als SMA/SMB/SMC-Gehäuse

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Stillen & Stillprobleme | Reich-Schottky, Utta, Rouw, Elien, Reich-Schottky, Utta, Rouw, Elien | ISBN: 9783980686761 | Kostenloser Versand für alle Bücher mit. Surface Mount Schottky Barrier Rectifiers - Shenzhen Luguang Electronic Technology Co., Ltd SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER, Transys Electronics. Electronic Components Datasheet Search English Chinese: German: Japanese: Russian: Korean: Spanish: French: Italian: Portuguese: Polish: Vietnamese: Delete All . ON OFF. ALLDATASHEET.COM: X . All: Datasheet: Distributor: Manufacturer. Schottky Barrier Rectifier Diode Lead-less Chip Form GENERAL DESCRIPTION AVX Schottky rectifier diodes offer unique lead-less chip packaging technology which eliminates the lead frame wire bond to give the chip top-bottom symmetry for fewer mounting problems, better heat transfer, and current handling capability (compared to SOD devices). FEATURES † Lead-less chip form † Low Vf † High.

Building a diode with a pure Schottky junction has the advantag e of the lowest possible forward voltage, but has some problems at high currents like the surge currents that are common in a PFC application. For example, during voltage surges in the line at startup, short over currents that could damage the SiC pure Schottky diode are quite common. PFC is a direct converter and any overstress. Apparently the problem is that during during Linux Kernel boot phases 1-3 all pins are floating (GPU to CPU handover) and on Phase 4, the PINs are set to the correct state. Connecting D0 and RST directly can result in a fired WEMOS. Using a higher resistor might work when your battery is full but might not work once your battery is running lower. I am using a normal diode (not a Schottky) and.

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Bitte den LDAP-ipa Login verwenden mit denselben Zugangsdaten wie noyce/schottky. Bei Login-Problemen an Benedikt Brütting wenden! Studenten Der Zugang kann durch Christopher Beck oder Benedikt Brütting erstellt werden. Für den Login muss der Standard-Login ausgewählt werden PDS760Q-13 Diodes Incorporated Schottky Diodes & Rectifiers 7A Schottky 60Vrrm 275A 0.62Vf 1050pF datasheet, inventory, & pricing BAT54JFILM STMicroelectronics Schottky Diodes & Rectifiers 300mA 40 Volt datasheet, inventory, & pricing

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Schottky problem. Describe/characterize J g ⊂ A g. Why might we care about the Schottky problem? Relates two important moduli spaces. Lots of beautiful geometry arises in this study. A good answer could help relate the geometry of M g and A g. Could have applications to problems about curves easily stated in terms of the Jacobian. matrices is the famous Schottky problem. This problem has been solved essentially by with positive definite imaginary part. To recognize the locus in Ah of the Riemann period where 'Hh denotes the Siegel upper-half plane, that is the space of symmetric h >< h matrices Ah : Hb/Sp(hv Z): (L2) the Siegel space symmetric and has positive definite imaginary part (see for example Let us consider. Liaison, Schottky problem and invariant theory : remembering Federico Gaeta, María Emilia Alonso [and others], editor This volume is a homage to the memory of the Spanish mathematician Federico Gaeta (1923-2007). Apart from a historical presentation of his life and interaction with the classical Italian school of algebraic geometry, the volume presents surveys and original research papers on the mathematics he studied. Specifically, it is divided into three parts: linkage theory, Schottky problem and.

The reverse recovery time (trr) of a Schottky barrier diode is determined by LC resonance caused by its total capacitance and wire inductance. Because the total capacitance of a Schottky barrier diode is not affected by temperature, its reverse recovery time does not change with temperature Mathematics Graduate Studen The Schottky Problem Thursday, 1 July 2010 17:05 (0:25) Content Summary Primary author(s) : C. SIEGEL (University of Pennsylvania, Philadelphia PA, USA) Presenter(s) : C. SIEGEL (University of Pennsylvania, Philadelphia PA, USA) Session Classi cation : The Schottky Problem. Created Date: 5/26/2021 7:12:08 PM. The Riemann-Schottky problem on the characterization of the Jacobians of curves among abelian varieties is more than 120 years old. Quite a few geometrical charac-terizations of Jacobians have been found. None of them provides an explicit system of equations for the image of the Jacobian locus in the projective space under the level-two theta imbedding..

16;Part IIIThe Schottky Problem;191 17;Survey on the Schottky Problem;193 17.1;1. The statement of the Schottky problem;193 17.2;2. Characterization of Jacobians in terms of the existence of trisecants;194 17.3;3. The G 00-conjecture;195 17.4;References;197 18;Abelian Solutions of the Soliton Equations and Geometry of Abelian Varieties;199 18.1. Boston University Libraries. Services . Navigate; Linked Data; Dashboard; Tools / Extras; Stats; Share . Social. Mai

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The Problem of Schottky Barrier. Authors; Authors and affiliations; P. Perfetti; Chapter. 194 Downloads; Part of the NATO ASI Series book series (ASIC, volume 355) Abstract. A short historical survey will be made of metal-semiconductor research and of the most widely used theoretical models that have tried to explain the physical reasons for the formation of a Schottky barrier. Among them the. Technology for Schottky diode with guard ring . This form of Schottky diode technology is used particularly in rectifier diodes where the voltages may be high and breakdown is more of a problem. It can even be used for some RF Schottky diodes as well. Schottky diode technology & structure note (Download) Liaison, Schottky Problem and Invariant Theory: Remembering Federico Gaeta (Progress in Mathematics) From Birkhäuser Download Now #10213311 in Books 2010-04-21Original language:EnglishPDF # 1 9.20 x .80 x 6.20l, 1.40 #File Name: 3034602006300 page Liaison, Schottky Problem and Invariant Theory Remembering Federico Gaeta Bearbeitet von Maria Emilia Alonso, Enrique Arrondo, Raquel Mallavibarrena, Ignacio Sols 1st Edition. 2010. Buch. 300 S. Hardcover ISBN 978 3 0346 0200 6 Format (B x L): 16,5 x 23,5 cm Gewicht: 659 g Weitere Fachgebiete > Mathematik > Geometrie > Algebraische Geometrie schnell und portofrei erhältlich bei Die Online.

The Mathematical Sciences Research Institute (MSRI), founded in 1982, is an independent nonprofit mathematical research institution whose funding sources include the National Science Foundation, foundations, corporations, and more than 90 universities and institutions. The Institute is located at 17 Gauss Way, on the University of California, Berkeley campus, close to Grizzly Peak, on the. Schottky (c) Field emission. (a) Thermionic emission (b) Thermionic-field emission Low doping Medium doping Heavy doping Fig. 3. Conduction mechanisms for metal/n-semiconductor contacts as a function of the barrier height and width. (a) Thermionic emission; (b) thermionic-field emission; (c) field emission. (1) Thermionic emission (TE), occurring in the case of a depletion region so wide that. From Wikipedia, the free encyclopedia. Jump to: navigation, search In mathematics, the Schottky problem, named after Friedrich Schottky, is a classical question of algebraic geometry, asking for a characterisation of Jacobian varieties amongst abelian varieties Report a connection problem; If we don't have it. Interlibrary borrowing; Suggest a purchase (limited to Stanford community) System status; Login My Account Feedback Reporting from: Message. Your name. Your email (Stanford users can avoid this Captcha by logging in.) Send Cancel. Check system status. Report wrong cover image . SearchWorks catalog Select search scope, currently: catalog all. This problem is usually eased by the addition of two diodes surrounding each MOSFET. Firstly, a Schottky diode is connected in series with the MOSFET source. The Schottky diode prevents the MOSFET body diode from ever being forward biased by the free-wheeling current. Secondly, a high speed (fast recovery) diode is connected in parallel to the.

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Castelnuovo theory and the geometric Schottky problem Item Preview remove-circle Share or Embed This Item. EMBED. EMBED (for wordpress.com hosted blogs and archive.org item <description> tags). A tutorial covering the advantages and disadvantages of schottky diodes over regular silicon diodes.200 diodes for $8 on Amazon: http://www.amazon.com/exec/o.. Schottky Diode. This is a special type of diode in which a PN junction is replaced by a metal semiconductor junction. The P-type semiconductor in a normal PN junction diode is replaced by a metal and N-type material is joined to the metal. This combination has no depletion region between them. The following figure shows the Schottky diode and its symbol. The metal used in this Schottky diode.

The asymptotic Schottky problem Item Preview remove-circle Share or Embed This Item. EMBED. EMBED (for wordpress.com hosted blogs and archive.org item <description> tags) Want more?. Documenta Math. 453 Andreotti-Mayer Loci and the Schottky Problem Ciro Ciliberto, Gerard van der Geer Received: July 4, 2007 Revised: May 27, 2008 Communicated by Thomas Petern Liaison, Schottky Problem and Invariant Theory : Remembering Federico Gaeta. Federico Gaeta (1923-2007) was a Spanish algebraic geometer who was a student of Severi. He is considered to be one of the founders of linkage theory, on which he published several key papers. After many years abroad he came back to Spain in the 1980s. He spent his. Finite subschemes of abelian varieties and the Schottky problem [Sous-schémas finis de variétés abéliennes et le problème de Schottky] Gulbrandsen, Martin G. ; Lahoz, Mart í. Annales de l'Institut Fourier, Tome 61 (2011) no. 5, pp. 2039-2064.. Liaison, Schottky Problem and Invariant Theory Remembering Federico Gaeta by Maria Emilia Alonso, Enrique Arrondo, Raquel Mallavibarrena. 0 Ratings 0 Want to read; 0 Currently reading; 0 Have read; This edition was published in Apr 08, 2011 by Springer — 304 pages.

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